Effects of microwave interference on the operational parameters of n-channel enhancement mode MOSFET devices in CMOS integrated circuits
نویسندگان
چکیده
The effects of microwave interference on the operational parameters of individual MOSFET devices on CMOS wafers were studied as microwave power and frequency were varied. The study used direct injection of microwave power into the device terminals, and the output characteristics were measured with and without the microwave interference. The study showed that injected microwave power significantly affects output current, transconductance, output conductance, and breakdown voltage for power levels above 10 dBm in the frequency range between 1 and 20 GHz. The effects result in the devices loosing switching-off capability, saturation and linearity in the amplification region of their output characteristics, and developing DC offset currents at zero drain bias, while breakdown shifts to significantly lower voltages. Most importantly the sensitivity to microwave power was strongly suppressed at frequencies above 5 GHz indicating the possibility of a by-pass path for the injected power through intrinsic capacitive coupling of the devices to ground. 2004 Elsevier Ltd. All rights reserved.
منابع مشابه
Design of a Resonant Suspended Gate MOSFET with Retrograde Channel Doping
High Q frequency reference devices are essential components in many Integrated circuits. This paper will focus on the Resonant Suspended Gate (RSG) MOSFET. The gate in this structure has been designed to resonate at 38.4MHz. The MOSFET in this device has a retrograde channel to achieve high output current. For this purpose, abrupt retrograde channel and Gaussian retrograde channels have bee...
متن کاملDesign and Implementation of MOSFET Circuits and CNTFET, Ternary Multiplier in the Field of Galois
Due to the high density and the low consumption power in the digital integrated circuits, mostly technology of CMOS is used. During the past times, the Metal oxide silicon field effect transistors (MOSFET) had been used for the design and implementation of the digital integrated circuits because they are compact and also they have the less consumption power and delay to the other transistors. B...
متن کاملDesign and Implementation of MOSFET Circuits and CNTFET, Ternary Multiplier in the Field of Galois
Due to the high density and the low consumption power in the digital integrated circuits, mostly technology of CMOS is used. During the past times, the Metal oxide silicon field effect transistors (MOSFET) had been used for the design and implementation of the digital integrated circuits because they are compact and also they have the less consumption power and delay to the other transistors. B...
متن کاملOutput-Conductance Transition-Free Method for Improving Radio-Frequency Linearity of SOI MOSFET Circuits
In this article, a novel concept is introduced to improve the radio frequency (RF) linearity of partially-depleted (PD) silicon-on-insulator (SOI) MOSFET circuits. The transition due to the non-zero body resistance (RBody) in output conductance of PD SOI devices leads to linearity degradation. A relation for RBody is defined to eliminate the transition and a method to obtain transition-free c...
متن کاملElectromagnetic Compatibility of CMOS circuits along the lifetime
The continuous scaling of CMOS circuits has set the MOSFET transistor in the nanoelectronic era. In this context, the functionality and complexity of integrated circuits (ICs) are growing up. However, the operation voltage has been continuously reduced. The higher complexity of ICs has allowed including electronic systems in a lot of safety critical applications (i.e., automotive, aeronautics a...
متن کامل